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| D TO-247 G S ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz POWER MOS IV (R) THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION (1-15MHz ) N - CHANNEL ENHANCEMENT MODE RF POWER MOSFET The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull commercial, medical and industrial RF power amplifier applications. * Specified 50 Volt, 13.56 MHz Characteristics: * Output Power = 125 Watts. * Gain = 21dB (Typ.) * Efficiency = 63% (Typ.) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Very High Breakdown for Improved Ruggedness. * Low Thermal Resistance. * Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25C unless otherwise specified. ARF440/441 UNIT Volts 150 150 11 30 167 0.75 -55 to 150 300 Amps Volts Watts C/W C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1 MIN TYP MAX UNIT Volts 150 6 250 1000 100 4 2 5 5 nA mhos Volts A VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 5.5A) Gate Threshold Voltage (VDS = VGS, ID = 200mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-4406 Rev C DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 50V f = 1 MHz MIN TYP ARF440/441 MAX UNIT 755 155 55 900 215 90 pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 30:1 Test Conditions VDD = 50V Pout = 125W IDQ = 200mA f = 13.56MHz MIN TYP MAX UNIT dB % 18 21 63 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT ATC"B" .01F C5 T2 L2 C4 Q1 L1 C1 75-480pF R3 3.3K R2 3.3K C2 T3 .1F RFC1 C8 .01F ATC"B" C9 .1F C10 .01F C11 + .1F ATC"B" .01F Q2 C7 0.5H T1 2:1 BFC1 C6 .01F ATC"B" 25-240pF 0.4H RF Output RF Input +Vbias R1 3.3K C3 VDD = 50V Idq = 0.4A 10F (50V) Parts List C1 = 75-480pF Compression Mica C2, C3 & C10 = .1F @ 50V, Novacap #1210B104K500N C4 = 25-240pF Compression Mica C5, C6, C7, C8 & C9 = .01F @ 50V, Novacap #1210B103K500N C11 = 10F @ 50V Electrolytic R1, R2 & R3 = 1K, 5%, 1/4W, Carbon Q1 = ARF440 Q2 = ARF441 L1 = 7.5 T of #18AWG, ID = .438", L = 0.5H L2 = 6.5 T of #18AWG, ID = .438", L = 0.4H BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. i = 125 RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. i = 2000 050-4406 Rev C T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. i = 850 T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25 PTFE coax on a Fair-Rite #2643102002 shield bead. i = 2000 PCB = .062" G10 Epoxy Glass. ARF440/441 300 Performance of aTypical Push-Pull Power Amplifier (2-Devices) f = 13.56 MHz V = 50V DD RF POWER OUT (WATTS) 250 200 150 100 50 0 I DQ = 400mA - 200mA / Side 0 0.5 1.0 1.5 2.0 2.5 3.0 RF POWER IN (WATTS) Figure 1, RF Power Out vs RF Power In 1.2 3.5 4.0 4.5 5.0 Figure 2, RF Power Out vs RF Power In 16 TJ = -55C VDS = 30V 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) DS =V GS 1.1 12 TJ = +25C 8 TJ = +125C 1.0 0.9 4 TJ = +125C TJ = +25C 0 TJ = -55C 0.8 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 3, Threshold Voltage vs Temperature 20 ID, DRAIN CURRENT (AMPERES) 10 5 1.2 re N) He (O n S io at y R D r pe B O ited m Li 1.1 1.0 1 .5 0.9 TC =+25C TJ =+150C 0.8 .1 1 5 10 50 100 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Maximum DC Safe Operating Area 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5, Breakdown Voltage vs Temperature 3,000 C, CAPACITANCE (pF) 1,000 500 Ciss Coss Crss 100 50 .01 .05 .5 1 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Capacitance vs. Drain-To-Source Voltage .1 10 50 050-4406 Rev C ARF440/441 TO-247AD Package Outline ARF440 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44E 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) GATE SOURCE DRAIN 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) ARF441 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) ARF44O 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) DRAIN SOURCE GATE 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 050-4406 Rev C CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388 -0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 |
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